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| SUD50N06-12 New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A)c 63 rDS(on) (W) 0.012 @ VGS = 10 V D TrenchFETr Power MOSFET D 175 _C Junction Temperature APPLICATIONS D Automotive and Industrial D TO-252 Drain Connected to Tab G D S G Top View Ordering Information: SUD50N06-12 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current, Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 60 "20 63c 36 100 63c 35 61 107b 3a - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta J ti t A bi t Junction-to-Case t v 10 sec Steady State Symbol RthJA RthJC Typical 16 40 1.1 Maximum 20 50 1.4 Unit _C/W C/W Notes a. Surface Mounted on 1" x1" FR4 Board. b. See SOA curve for voltage derating. c. Calculate continuous current based on maximum allowable junction temperature when using infinite heat sink. Package limitation current is 50 A. Document Number: 72385 S-31920--Rev. A, 15-Sep-03 www.vishay.com 1 SUD50N06-12 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VDS = 15 V, ID = 20 A 25 50 0.0095 0.012 0.021 0.027 S W 60 2.0 4.0 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.6 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 50 A , , f = 1 MHz VGS = 0 V, VDS = 25 V, F = 1 MHz 2500 400 165 2.1 40 13 12 15 11 30 7 25 20 50 15 ns 60 nC W pF Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.0 40 100 1.5 80 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72385 S-31920--Rev. A, 15-Sep-03 SUD50N06-12 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 6 V 80 I D - Drain Current (A) I D - Drain Current (A) 80 100 Vishay Siliconix Transfer Characteristics 60 5V 40 60 40 TC = 125_C 25_C - 55_C 20 4V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 20 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance 120 100 g fs - Transconductance (S) 80 125_C 60 40 20 0 0 10 20 30 40 50 60 TC = - 55_C r DS(on)- On-Resistance ( W ) 25_C 0.012 0.016 On-Resistance vs. Drain Current 0.008 VGS = 10 V 0.004 0.000 0 20 40 60 80 100 ID - Drain Current (A) 3500 3000 Ciss C - Capacitance (pF) 2500 2000 1500 1000 Crss 500 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Coss ID - Drain Current (A) 20 VDS = 30 V ID = 50 A Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) 16 12 8 4 0 0 10 20 30 40 50 60 70 80 Qg - Total Gate Charge (nC) Document Number: 72385 S-31920--Rev. A, 15-Sep-03 www.vishay.com 3 SUD50N06-12 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.8 2.4 r DS(on)- On-Resistance ( W ) (Normalized) 2.0 1.6 1.2 0.8 0.4 - 50 VGS = 10 V ID = 20 A I S - Source Current (A) TJ = 150_C 100 Source-Drain Diode Forward Voltage 10 TJ = 25_C - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 80 Limited by Package I D - Drain Current (A) 1000 Safe Operating Area 60 I D - Drain Current (A) 100 Limited by rDS(on) 10 ms 100 ms 40 10 1 ms 10 ms 1 TC = 25_C Single Pulse 100 ms 1 s, dc 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72385 S-31920--Rev. A, 15-Sep-03 SUD50N06-12 New Product THERMAL RATINGS 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 72385 S-31920--Rev. A, 15-Sep-03 www.vishay.com 5 |
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